v rrm = 20 v - 40 v i f(av) = 120 a features ? high surge capability three tower package ? isolation type package ? electrically isolated base plate ? not esd sensitive parameter symbol mbrt12020(r) MBRT12030(r) unit repetitive peak reverse voltage v rrm 20 30 v rms reverse voltage v rms 14 21 v dc blocking voltage v dc 20 30 v ? types from 20 v to 40 v v rrm silicon power schottk y diode mbrt12020 thru mbrt12040r mbrt12040(r) 35 25 mbrt12035(r) maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads reversed) conditions 40 28 40 35 dc blocking voltage v dc 20 30 v operating temperature t j -55 to 150 -55 to 150 c storage temperature t stg -55 to 150 -55 to 150 c parameter symbol mbrt12020(r) MBRT12030(r) unit average forward current (per pkg) i f(av) 120 120 a maximum instantaneous forward voltage (per leg) 0.70 0.70 11 10 10 30 30 thermal characteristics thermal resistance, junction- case (per leg) r jc 0.80 0.80 c/w a t j = 100 c 10 10 maximum instantaneous reverse current at rated dc blocking voltage (per leg) i r v f t c = 125 c peak forward surge current (per leg) i fsm t p = 8.3 ms, half sine electrical characteristics, at tj = 25 c, unless otherwise specified ma v t j = 25 c i fm = 60 a, t j = 25 c conditions -55 to 150 mbrt12035(r) 0.80 t j = 150 c 0.80 0.70 0.70 30 30 120 120 800 800 800 800 -55 to 150 -55 to 150 40 35 -55 to 150 mbrt12040(r) 11 www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 1
mbrt12020 thru mbrt12040r www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. mbrt12020 thru mbrt12040r www.genesicsemi.com/s ilicon-products/schottky-rectifiers/ 3
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